september 2010 fdp10n60nz / fdpf10n6 0nz n-channel mosfet ?2010 fairchild semiconductor corporation fdp10n60nz / FDPF10N60NZ rev. a www.fairchildsemi.com 1 unifet-ii tm to-220 fdp series g d s g s d g s d t c = 25 o c unless otherwise noted * *dran current limited by maximum junction temperature thermal characteristics symbol parameter fdp10n60nz FDPF10N60NZ units v dss drain to source voltage 600 v v gss gate to source voltage 25 v i d drain current - continuous (t c = 25 o c) 10 10* a - continuous (t c = 100 o c) 6 6* i dm drain current - pulsed (note 1) 40 40* a e as single pulsed avalanche energy (note 2) 550 mj i ar avalanche current (note 1) 10 a e ar repetitive avalanche energy (note 1) 18.5 mj dv/dt peak diode recovery dv/dt (note 3) 10 v/ns p d power dissipation (t c = 25 o c) 185 38 w - derate above 25 o c1.50.3w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter fdp10n60nz FDPF10N60NZ units r ? jc thermal resistance, junction to case 0.68 3.3 o c/w r ? cs thermal resistance, case to sink typ 0.5 - r ? ja thermal resistance, junction to ambient 62.5 62.5 fdp10n60nz / FDPF10N60NZ n-channel mosfet ? 600v, 10a, 0.75 ? features ?r ds(on) = 0.64 ? ( typ.)@ v gs = 10v, i d = 5a ? low gate charge ( typ. 23nc) ? low c rss ( typ. 10pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? esd improved capability ? rohs compliant description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switched mode power s upplies and active power factor correction.
fdp10n60nz / fdpf10n6 0nz n-channel mosfet www.fairchildsemi.com 2 fdp10n60nz / FDPF10N60NZ rev. a package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fdp10n60nz fdp10n60nz to-220 - - 50 FDPF10N60NZ FDPF10N60NZ to-220f - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 ? a, v gs = 0v, t j = 25 o c 600 --v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 ? a, referenced to 25 o c-0.6-v/ o c i dss zero gate voltage drain current v ds = 600v, v gs = 0v - - 1 ? a v ds = 480v, t c = 125 o c--10 i gss gate to body leakage current v gs = 25v, v ds = 0v - - ? 10 ? a v gs(th) gate threshold voltage v gs = v ds , i d = 250 ? a 3.0 - 5.0 v r ds(on) static drain to source on resistance v gs = 10v, i d = 5a - ? 0.64 0.75 ? g fs forward transconductance v ds = 20v, i d = 5a - 14 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 1110 1475 pf c oss output capacitance - 130 175 pf c rss reverse transfer capacitance - 10 15 pf q g total gate charge at 10v v ds = 480v, i d = 10a v gs = 10v -2330nc q gs gate to source gate charge - 6 - nc q gd gate to drain ?miller? charge - 8 - nc t d(on) turn-on delay time v dd = 300v, i d = 10a r g = 25 ? -2560ns t r turn-on rise time - 50 110 ns t d(off) turn-off delay time - 70 150 ns t f turn-off fall time - 50 110 ns i s maximum continuous drain to source diode forward current - - 10 a i sm maximum pulsed drain to source diode forward current - - 40 a v sd drain to source diode forward voltage v gs = 0v, i sd = 10a - - 1.4 v t rr reverse recovery time v gs = 0v, i sd = 10a di f /dt = 100a/ ? s - 300 - ns q rr reverse recovery charge - 2 - ? c notes: 1. repetitive rating: pulse width limit ed by maximum junction temperature 2. l = 11mh, i as = 10a, v dd = 50v, r g = 25 ? , starting t j = 25 ? c 3. i sd ?? 10a, di/dt ? 200a/ ? s, v dd ? bv dss , starting t j = 25 ? c 4.pulse test: pulse width ?????? s,duty cycle ???? 5. essentially independent of operating temperature typical characteristics
fdp10n60nz / fdpf10n6 0nz n-channel mosfet www.fairchildsemi.com 3 fdp10n60nz / FDPF10N60NZ rev. a typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 246810 0.1 1 10 100 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 ? s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0.5 1 10 0.5 1 10 30 *notes: 1. 250 ? s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15.0v 10.0v 8.0v 7.0v 6.0v 5.5v 0 5 10 15 20 0.5 0.6 0.7 0.8 0.9 1.0 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ? ] , drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100 *notes: 1. v gs = 0v 2. 250 ? s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 10 -1 110 30 1 10 100 1000 4000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 5 10 15 20 25 0 2 4 6 8 10 *note: i d = 10a v ds = 120v v ds = 300v v ds = 480v v gs , gate-source voltage [v] q g , total gate charge [nc]
fdp10n60nz / fdpf10n6 0nz n-channel mosfet www.fairchildsemi.com 4 fdp10n60nz / FDPF10N60NZ rev. a typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum safe operating area -fdp10n60nz -FDPF10N60NZ figure 11. maximum drain current vs. case temperature -100 -50 0 50 100 150 0.90 0.95 1.00 1.05 1.10 1.15 *notes: 1. v gs = 0v 2. i d = 250 ? a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 0.25 0.5 1.0 1.5 2.0 2.5 2.75 *notes: 1. v gs = 10v 2. i d = 5a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 0.1 1 10 100 1000 3000 0.01 0.1 1 10 100 30 ? s 100 ? s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 1 10 100 1000 3000 0.01 0.1 1 10 100 30 ? s 100 ? s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 2 4 6 8 10 i d , drain current [a] t c , case temperature [ o c ]
fdp10n60nz / fdpf10n6 0nz n-channel mosfet www.fairchildsemi.com 5 fdp10n60nz / FDPF10N60NZ rev. a 10 -5 10 -4 10 -3 10 -2 10 -1 11 0 0.001 0.01 0.1 1 5 0.01 0.1 0.2 0.05 0.02 *notes: 1. z t jc (t) = 3.3 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z t jc (t) 0.5 single pulse thermal response [ z t jc ] rectangular pulse duration [sec] typical performance characteristics (continued) figure 12. transient thermal response curve -fdp10n60nz 10 -5 10 -4 10 -3 10 -2 10 -1 11 0 0.005 0.01 0.1 1 2 0.01 0.1 0.2 0.05 0.02 *notes: 1. z t jc (t) = 0.68 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z t jc (t) 0.5 single pulse thermal response [ z t jc ] rectangular pulse duration [sec] t 1 p dm t 2 figure 13. transient thermal response curve -FDPF10N60NZ t 1 p dm t 2
fdp10n60nz / fdpf10n6 0nz n-channel mosfet www.fairchildsemi.com 6 fdp10n60nz / FDPF10N60NZ rev. a gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
fdp10n60nz / fdpf10n6 0nz n-channel mosfet www.fairchildsemi.com 7 fdp10n60nz / FDPF10N60NZ rev. a peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
fdp10n60nz / fdpf10n6 0nz n-channel mosfet www.fairchildsemi.com 8 fdp10n60nz / FDPF10N60NZ rev. a mechanical dimensions to-220
fdp10n60nz / fdpf10n6 0nz n-channel mosfet www.fairchildsemi.com 9 fdp10n60nz / FDPF10N60NZ rev. a package dimensions dimensions in millimeters to-220f * front/back side isolation voltage : ac 2500v
fdp10n60nz / fdpf10n60 nz n-channel mosfet www.fairchildsemi.com 10 10 fdp10n60nz / FDPF10N60NZ rev. a trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devic es or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a sign ificant injury of the user. 2. a critical component in any com ponent of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? 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